Single Ended 8t Sub Threshold Sram Cell with Dynamic Feedback Control

S P Mounika, Ch Sreedhar

Abstract


A novel 8-transistor (8T) static arbitrary access memory cell with enhanced information steadiness in sub limit operation is outlined. The proposed singlefinished with element input control 8T static RAM (SRAM) cell improves the Static Noise Margin(SNM) for ultra low power supply.) for ultralow power offer. The write time is seventy one lesser than that of single-ended asymmetrical 8T cell. The projected 8T consumes less write power 0.72×,0.6×, and 0.85×as that of 5T, 6T, and is space RD-8T, severally. The scan power is 0.49×of 5T, 0.48×of 6T, and 0.64×of RD-8T. The power/energy consumption of 1-kb 8T SRAM array throughout scan and write operations is  of 5T, 0.48x of 6T, and 0.64x of RD-8T.These options modify ultralow power applications of 8T SRAM cell.


Full Text:

PDF




Copyright (c) 2017 Edupedia Publications Pvt Ltd

Creative Commons License
This work is licensed under a Creative Commons Attribution-NonCommercial-ShareAlike 4.0 International License.

Publisher

EduPedia Publications Pvt Ltd, D-351, Prem Nagar-2, Suleman Nagar, Kirari, Nagloi, New Delhi PIN-Code 110086, India Through Phone Call us now: +919958037887 or +919557022047

All published Articles are Open Access at https://edupediapublications.org/journals/


Paper submission: editor@edupediapublications.com or edupediapublications@gmail.com

Editor-in-Chief       editor@edupediapublications.com

Mobile:                  +919557022047 & +919958037887

Websites   https://edupediapublications.org/journals/.

Journals Maintained and Hosted by

EduPedia Publications (P) Ltd in Association with Other Institutional Partners

http://edupediapublications.org/

Pen2Print and IJR are registered trademark of the Edupedia Publications Pvt Ltd.